Photoluminescence Imaging of Semiconductors
نویسندگان
چکیده
منابع مشابه
Photoluminescence and Excitation Studies of Semiconductors
A photolummescence (PL) study of Be and Au ion-implanted GaN is pre sented GaN samples were implanted and selectively annealed prior to excita tion by a HeCd laser The resulting luminescence was dispersed by a grating spectrom eter and detected using a photomultiplier tube Be is proposed to form a shallow acceptor in GaN and is thus critical to device development and performance From analysis...
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ژورنال
عنوان ژورنال: Microscopy and Microanalysis
سال: 2014
ISSN: 1431-9276,1435-8115
DOI: 10.1017/s1431927614004383